@article{Kłeczek_2013, title={THE DESIGN OF READOUT FRONT-END ELECTRONICS FOR TIME AND ENERGY MEASUREMENTS FOR SEMICONDUCTOR STRIP DETECTORS}, volume={3}, url={https://ph.pollub.pl/index.php/iapgos/article/view/1472}, DOI={10.35784/iapgos.1472}, abstractNote={<p><span class="fontstyle0">This work presents the design of the readout front-end electronics for time and energy measurements dedicated for double-sided strip detectors implemented in submicron technology UMC 180 nm CMOS. The simultaneous and accurate measurements of time and energy deposited in the detector by a photon requires the use of two different parallel processing paths in the single channel: fast and slow. The designed front-end electronics is characterized by low power dissipation level P=3.2 mW, low noise performance ENC=586 e- rms (for “slow” path and at C</span><span class="fontstyle0">det</span><span class="fontstyle0">=30 pF). The single channel occupies silicon chip area of 50 µm × 1100 µm.</span> </p>}, number={4}, journal={Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska}, author={Kłeczek, Rafał}, year={2013}, month={Dec.}, pages={18–21} }