ADVANCED MEMRISTOR MODEL WITH A MODIFIED BIOLEK WINDOW AND A VOLTAGE-DEPENDENT VARIABLE EXPONENT


Abstract

The main idea of the present research is to propose a new nonlinear ionic drift memristor model suitable for computer simulations of memristor elements for different voltages. For this purpose, a modified Biolek window function with a voltage-dependent exponent is applied. The proposed modified memristor model is based on Biolek model and due to this and to the use of a voltage-dependent positive integer exponent in the modified Biolek window function it has a new improved property - changing the model nonlinearity extent dependent on the integer exponent in accordance with the memristor voltage. Several computer simulations were made for soft-switching and hard-switching modes and also for pseudo-sinusoidal alternating voltage with an exponentially increasing amplitude and the respective basic important time diagrams, state-flux and i-v relationships are established.


Keywords

memristor; nonlinear ionic dopant drift; modified Biolek window function; voltage-dependent exponent

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Published : 2018-05-30


Mladenov, V., & Kirilov, S. (2018). ADVANCED MEMRISTOR MODEL WITH A MODIFIED BIOLEK WINDOW AND A VOLTAGE-DEPENDENT VARIABLE EXPONENT. Informatyka, Automatyka, Pomiary W Gospodarce I Ochronie Środowiska, 8(2), 15-20. https://doi.org/10.5604/01.3001.0012.0697

Valeri Mladenov  valerim@tu-sofia.bg
Technical University of Sofia, Faculty of Automatics, Department of Theoretical Electrical Engineering  Bulgaria
Stoyan Kirilov 
Technical University of Sofia, Faculty of Automatics, Department of Theoretical Electrical Engineering  Bulgaria