ADVANCED MEMRISTOR MODEL WITH A MODIFIED BIOLEK WINDOW AND A VOLTAGE-DEPENDENT VARIABLE EXPONENT
Valeri Mladenov
valerim@tu-sofia.bgTechnical University of Sofia, Faculty of Automatics, Department of Theoretical Electrical Engineering (Bulgaria)
Stoyan Kirilov
Technical University of Sofia, Faculty of Automatics, Department of Theoretical Electrical Engineering (Bulgaria)
Abstract
The main idea of the present research is to propose a new nonlinear ionic drift memristor model suitable for computer simulations of memristor elements for different voltages. For this purpose, a modified Biolek window function with a voltage-dependent exponent is applied. The proposed modified memristor model is based on Biolek model and due to this and to the use of a voltage-dependent positive integer exponent in the modified Biolek window function it has a new improved property - changing the model nonlinearity extent dependent on the integer exponent in accordance with the memristor voltage. Several computer simulations were made for soft-switching and hard-switching modes and also for pseudo-sinusoidal alternating voltage with an exponentially increasing amplitude and the respective basic important time diagrams, state-flux and i-v relationships are established.
Keywords:
memristor, nonlinear ionic dopant drift, modified Biolek window function, voltage-dependent exponentReferences
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Authors
Valeri Mladenovvalerim@tu-sofia.bg
Technical University of Sofia, Faculty of Automatics, Department of Theoretical Electrical Engineering Bulgaria
Authors
Stoyan KirilovTechnical University of Sofia, Faculty of Automatics, Department of Theoretical Electrical Engineering Bulgaria
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