A COMPARISON STUDY OF THE FEATURES OF DC/DC SYSTEMS WITH SI IGBT AND SIC MOSFET TRANSISTORS
Karol Fatyga
k.fatyga@pollub.plLublin University of Technology, Faculty of Electrical Engineering and Computer Science, Department of Electrical Drives and Machines (Poland)
Łukasz Kwaśny
Lublin University of Technology, Faculty of Electrical Engineering and Computer Science, Department of Electrical Drives and Machines (Poland)
Bartłomiej Stefańczak
Lublin University of Technology, Faculty of Electrical Engineering and Computer Science, Department of Electrical Drives and Machines (Poland)
Abstract
This paper presents a comparison of the efficiency of two bidirectional DC/DC converters based on dual H-bridge topology. Tested converters were built using Si-based IGBT transistors and SiC-based MOSFETs. The results of the research are efficiency characteristics, taken from tests at the frequency range of 10÷60 kHz. Analysis of the results points to a massive advantage of the SiC-based design over the Si-based one.
Keywords:
IGBT, SiC, transistor, MOSFET, DC/DC converterReferences
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Authors
Karol Fatygak.fatyga@pollub.pl
Lublin University of Technology, Faculty of Electrical Engineering and Computer Science, Department of Electrical Drives and Machines Poland
Authors
Łukasz KwaśnyLublin University of Technology, Faculty of Electrical Engineering and Computer Science, Department of Electrical Drives and Machines Poland
Authors
Bartłomiej StefańczakLublin University of Technology, Faculty of Electrical Engineering and Computer Science, Department of Electrical Drives and Machines Poland
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