A COMPARISON STUDY OF THE FEATURES OF DC/DC SYSTEMS WITH SI IGBT AND SIC MOSFET TRANSISTORS

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Published: May 30, 2018
DOI: https://doi.org/10.5604/01.3001.0012.0715
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DOI

https://doi.org/10.5604/01.3001.0012.0715

Authors

Karol Fatyga

k.fatyga@pollub.pl

Lublin University of Technology, Faculty of Electrical Engineering and Computer Science, Department of Electrical Drives and Machines, Poland
Łukasz Kwaśny

l.kwasny@pollub.pl

Lublin University of Technology, Faculty of Electrical Engineering and Computer Science, Department of Electrical Drives and Machines, Poland
Bartłomiej Stefańczak

bartlomiej.stefanczak@pollub.edu.pl

Lublin University of Technology, Faculty of Electrical Engineering and Computer Science, Department of Electrical Drives and Machines, Poland

Abstract

This paper presents a comparison of the efficiency of two bidirectional DC/DC converters based on dual H-bridge topology. Tested converters were built using Si-based IGBT transistors and SiC-based MOSFETs. The results of the research are efficiency characteristics, taken from tests at the frequency range of 10÷60 kHz. Analysis of the results points to a massive advantage of the SiC-based design over the Si-based one.

Keywords:

IGBT, SiC, transistor, MOSFET, DC/DC converter

References

Article Details

Fatyga, K., Kwaśny, Łukasz, & Stefańczak, B. (2018). A COMPARISON STUDY OF THE FEATURES OF DC/DC SYSTEMS WITH SI IGBT AND SIC MOSFET TRANSISTORS. Informatyka, Automatyka, Pomiary W Gospodarce I Ochronie Środowiska, 8(2), 68–71. https://doi.org/10.5604/01.3001.0012.0715