A COMPARISON STUDY OF THE FEATURES OF DC/DC SYSTEMS WITH SI IGBT AND SIC MOSFET TRANSISTORS


Abstract

This paper presents a comparison of the efficiency of two bidirectional DC/DC converters based on dual H-bridge topology. Tested converters were built using Si-based IGBT transistors and SiC-based MOSFETs. The results of the research are efficiency characteristics, taken from tests at the frequency range of 10÷60 kHz. Analysis of the results points to a massive advantage of the SiC-based design over the Si-based one.


Keywords

IGBT; SiC; transistor; MOSFET; DC/DC converter

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Published : 2018-05-30


Fatyga, K., Kwaśny, Łukasz, & Stefańczak, B. (2018). A COMPARISON STUDY OF THE FEATURES OF DC/DC SYSTEMS WITH SI IGBT AND SIC MOSFET TRANSISTORS. Informatyka, Automatyka, Pomiary W Gospodarce I Ochronie Środowiska, 8(2), 68-71. https://doi.org/10.5604/01.3001.0012.0715

Karol Fatyga  k.fatyga@pollub.pl
Lublin University of Technology, Faculty of Electrical Engineering and Computer Science, Department of Electrical Drives and Machines  Poland
Łukasz Kwaśny 
Lublin University of Technology, Faculty of Electrical Engineering and Computer Science, Department of Electrical Drives and Machines  Poland
Bartłomiej Stefańczak 
Lublin University of Technology, Faculty of Electrical Engineering and Computer Science, Department of Electrical Drives and Machines  Poland