ELLIPSOMETRY BASED SPECTROSCOPIC COMPLEX FOR RAPID ASSESSMENT OF THE Bi2Te3-xSex THIN FILMS COMPOSITION

Vladimir Kovalev

vladimirkovalev.inc@gmail.com
MOCVD Semiconductor Growth Laboratory, Kotelnikov Institute of Radio-Engineering and Electronics of RAS (Russian Federation)
http://orcid.org/0000-0003-3570-393X

Saygid Uvaysov


MIREA – Russian Technological University (Russian Federation)
http://orcid.org/0000-0003-1943-6819

Marcin Bogucki


Lublin University of Technology, Faculty of Mechanical Engineering, Department of Automation (Poland)
http://orcid.org/0000-0001-5296-3827

Abstract

A comparative analysis of the current state and development of spectral ellipsometry (SE) is carried out, the main limitations typical of popular configurations of measuring devices are determined. An original technical solution is proposed that allows one to create a two-source SE that implements the ellipsometry method with switching orthogonal polarization states. The measuring setup provides high precision of measurements of ellipsometric parameters Ψ and Δ in the spectral range of 270–2200 nm and the speed determined by the characteristics of pulsed sources with a simple ellipsometer design. As objects for experimental researches, confirming the efficiency and high precision qualities of the fabricated SE, we used a GaAs/ZnS-quarter-wave device for a CO2 laser and SiO2 on Si calibration plates. The optical properties of Bi2Te3-xSex films were investigated in the range of 270–1000 nm using a multi-angle SE. It was shown that the optical properties of Bi2Te3-xSex films monotonically change depending on the ratio of selenium and tellurium.


Keywords:

thin films, optical properties, spectroscopy, Fourier transform, ellipsometry and polarimetry, optics on surfaces, instrumentation, measurements and metrology

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Published
2021-12-20

Cited by

Kovalev, V., Uvaysov, S., & Bogucki, M. (2021). ELLIPSOMETRY BASED SPECTROSCOPIC COMPLEX FOR RAPID ASSESSMENT OF THE Bi2Te3-xSex THIN FILMS COMPOSITION. Informatyka, Automatyka, Pomiary W Gospodarce I Ochronie Środowiska, 11(4), 67–74. https://doi.org/10.35784/iapgos.2855

Authors

Vladimir Kovalev 
vladimirkovalev.inc@gmail.com
MOCVD Semiconductor Growth Laboratory, Kotelnikov Institute of Radio-Engineering and Electronics of RAS Russian Federation
http://orcid.org/0000-0003-3570-393X

Authors

Saygid Uvaysov 

MIREA – Russian Technological University Russian Federation
http://orcid.org/0000-0003-1943-6819

Authors

Marcin Bogucki 

Lublin University of Technology, Faculty of Mechanical Engineering, Department of Automation Poland
http://orcid.org/0000-0001-5296-3827

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