THE SOURCES OF RADIATION IN THE SHORT-WAVE RANGE ON THE BASIS OF II-VI HETEROLAYERS

Berezovskii M. M., Makhnii V. P., Slyotov M. M.: Influence of an isovalent Cd impurity on photoluminescence of ZnSe crystals. Journal of Applied Spectroscopy 62(6)/1995, 1075–1079.
  Google Scholar

Fistul V. I.: Doping impurity atoms in semiconductors (state and condition). Fiz.-Mat. Lit., Moscow 2004.
  Google Scholar

Gorkavenko T. V., Zubkova S. M., Makara V. A., Rusina L. N.: Temperature dependence of the band structure of ZnS, ZnSe, ZnTe, and CdTe wurtzite-type semiconductor compounds. Semiconductors 41(8)/2007, 886–896.
  Google Scholar

Gribkovskii V. P.: The theory of light absorption and emission in semiconductors. Nauka i Teknika, Minsk 1975.
  Google Scholar

Khomyak V. V., Slyotov M. M., Shtepliuk I. I., Lashkarev G. V., Slyotov O. M., Marianchuk P. D., Kosolovskiy V. V.: Annealing effect on the near-band edge emission of ZnO. Journal of Physics and Chemistry of Solids 74/2013, 291–297.
  Google Scholar

Koh Era, Langer D. W.: Luminescence of ZnSe near the band edge under strong laser light excitation. J. Luminescence 1-2/1970, 514–527.
  Google Scholar

Makhniy V. P., Baranjuk V. Ye., Demich M. V., Melnik V. V., Malimon I. V., Slyotov M. M., Sobistchanskiy B. M., Stets E. V.: Isovalent substitution – a perspective methods of producing heterojunction optoelectronical devices. Proc. SPIE 4425, 2000, 272–276.
  Google Scholar

Makhniy V. P., Slyotov M. M., Stets E. V., Tkachenko I. V., Gorley V. V., Horley P. P.: Application of modulation spectroscopy for determination of recombination center parameters. Thin Solid Films 450/2004, 222–225.
  Google Scholar

Peter Y. Yu, Cardona M.: Fundamentals of semiconductors. Physics and materials properties. (4th Ed). Springer-Verlag, Berlin Heidelberg 2010.
  Google Scholar

Tamargo M.C.: II-VI Semiconductor Materials and their Application. Taylor & Francis, New York 2002.
  Google Scholar