PHOTODIODE BASED ON THE EPITAXIAL PHOSPHIDE GALLIUM WITH INCREASED SENSITIVITY AT A WAVELENGTH OF 254 nm


Abstract

The paper shows the results of the development of a photodiode technology based on gallium phosphide structure n+-n-GaP-Au with high sensitivity. It provides the ion etching of the surface of the gallium phosphide before an application of a leading electrode of gold. The barrier layer of a 20 nm thick gold is applied to the substrate in the magnetic field of GaP. When forming the contact with the reverse side of the indium substrate at 600°C, there occurs the annealing of the gold barrier layer. At the maximum of the spectral characteristics obtained by the photodiode, it has a sensitivity of 0.13 A/W, and at a wavelength of 254 nm – about 0.06 A/W. The dynamic range of the photodiode is not less than 107.


Keywords

photodiode; gallium phosphide; sensitive; 254 nm; Schottky barrier

Anisimov I. D., Stafeev V. I.: Ultraviolet photodetectors based on wideband compounds. Applied physics 2/1999, 41–44.

Bix M. P., Dobrovolsky Y. G., Shabashkevich B.: UV Photodetectors based on gallium phosphide. Applied physics 4/2005, 97–100.

Dobrovolsky Y. G.: Photodiode, resistant to ambient lighting. Sensor Electronics and Microsystem Technologies 4/2006, 33–37.

Dobrovolsky Y. G., Pidkamin L., Prokhorov G.: Photodiodes on the basis of gallium phosphate with increased sensitivity at a wavelength of 254 nm. Proceedings SPIE 8338/2011, 83380N [http://doi.org/10.1117/12.920931]. DOI: https://doi.org/10.1117/12.920931

Dobrovolsky Y. G.: Based on GaP photodiode with high sensitivity in the short-wave UV region of the spectrum. TKEA 5/2012, 31–34.

Lamkin I. A., Menkovich E. A., Tarasov S. A.: Ultraviolet photodiodes based metal contacts – solid solutions of gallium nitride and aluminum. Scientific and technical statements STU. Physics and mathematics 3/2012, 28–31.

Malik A. I.: Optoelectronic properties of heteroijunctions metal oxide-gallium phosphide. Semiconductor Physics and Technology 25(10)/1991, 1891–1695.

Malik A. I., Seco A., Fortunator E., Martins R., Shabashkevich B., Piroszenko S.: A new high ultraviolet sensivity FTO-GaP Schottky photodiode fabricated by spray pyrolysis. Semicond. Sci. Technol. 13/1998, 102–107. DOI: https://doi.org/10.1088/0268-1242/13/1/016

Nicollian E. H., Brews J. R.: MOS (Metal Oxide Semiconductor) Physics and Technology. Wiley, New York 1982.

Sah C. T.: Fundamentals of solid-state electronics. World Scientific, 1991. DOI: https://doi.org/10.1142/1388

Sze S. M., Ng K. K.: Physics of Semiconductor Devices. 3rd Edition. John Wiley & Sons Inc., New Jersey 2006. DOI: https://doi.org/10.1002/0470068329

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Published : 2020-03-30


Dobrovolsky, Y., Lipka, V. M., Strebezhev, V. V., Sorokatyi, Y. O., Sorokatyi, M. O., & Andreeva, O. P. (2020). PHOTODIODE BASED ON THE EPITAXIAL PHOSPHIDE GALLIUM WITH INCREASED SENSITIVITY AT A WAVELENGTH OF 254 nm. Informatyka, Automatyka, Pomiary W Gospodarce I Ochronie Środowiska, 10(1), 36-39. https://doi.org/10.35784/iapgos.910

Yurii Dobrovolsky  y.dobrovolsky@chnu.edu.ua
  Ukraine
Volodymyr M. Lipka 
PJC ”CDB Rhythm”, Chernivtsy  Ukraine
http://orcid.org/0000-0002-5899-6213
Volodymyr V. Strebezhev 
Yuriy Fedkovych Chernivtsi National University  Ukraine
http://orcid.org/0000-0001-8962-647X
Yurii O. Sorokatyi 
Yuriy Fedkovych Chernivtsi National University  Ukraine
http://orcid.org/0000-0001-9462-775X
Mykola O. Sorokatyi 
Yuriy Fedkovych Chernivtsi National University  Ukraine
http://orcid.org/0000-0001-6602-5698
Olga P. Andreeva 
PJC ”CDB Rhythm”, Chernivtsy  Ukraine
http://orcid.org/0000-0002-9437-1931