PHOTODIODE BASED ON THE EPITAXIAL PHOSPHIDE GALLIUM WITH INCREASED SENSITIVITY AT A WAVELENGTH OF 254 nm
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Abstract
The paper shows the results of the development of a photodiode technology based on gallium phosphide structure n+-n-GaP-Au with high sensitivity. It provides the ion etching of the surface of the gallium phosphide before an application of a leading electrode of gold. The barrier layer of a 20 nm thick gold is applied to the substrate in the magnetic field of GaP. When forming the contact with the reverse side of the indium substrate at 600°C, there occurs the annealing of the gold barrier layer. At the maximum of the spectral characteristics obtained by the photodiode, it has a sensitivity of 0.13 A/W, and at a wavelength of 254 nm – about 0.06 A/W. The dynamic range of the photodiode is not less than 107.
Keywords:
photodiode, gallium phosphide, sensitive, 254 nm, Schottky barrier
Article Details
Dobrovolsky, Y., Lipka, V. M., Strebezhev, V. V., Sorokatyi, Y. O., Sorokatyi, M. O., & Andreeva, O. P. (2020). PHOTODIODE BASED ON THE EPITAXIAL PHOSPHIDE GALLIUM WITH INCREASED SENSITIVITY AT A WAVELENGTH OF 254 nm. Informatyka, Automatyka, Pomiary W Gospodarce I Ochronie Środowiska, 10(1), 36–39. https://doi.org/10.35784/iapgos.910