The paper shows the results of the development of a photodiode technology based on gallium phosphide structure n+-n-GaP-Au with high sensitivity. It provides the ion etching of the surface of the gallium phosphide before an application of a leading electrode of gold. The barrier layer of a 20 nm thick gold is applied to the substrate in the magnetic field of GaP. When forming the contact with the reverse side of the indium substrate at 600°C, there occurs the annealing of the gold barrier layer. At the maximum of the spectral characteristics obtained by the photodiode, it has a sensitivity of 0.13 A/W, and at a wavelength of 254 nm – about 0.06 A/W. The dynamic range of the photodiode is not less than 107.


photodiode; gallium phosphide; sensitive; 254 nm; Schottky barrier

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Published : 2020-03-30

Dobrovolsky, Y., Lipka, V. M., Strebezhev, V. V., Sorokatyi, Y. O., Sorokatyi, M. O., & Andreeva, O. P. (2020). PHOTODIODE BASED ON THE EPITAXIAL PHOSPHIDE GALLIUM WITH INCREASED SENSITIVITY AT A WAVELENGTH OF 254 nm. Informatyka, Automatyka, Pomiary W Gospodarce I Ochronie Środowiska, 10(1), 36-39.

Yurii Dobrovolsky
Volodymyr M. Lipka 
PJC ”CDB Rhythm”, Chernivtsy  Ukraine
Volodymyr V. Strebezhev 
Yuriy Fedkovych Chernivtsi National University  Ukraine
Yurii O. Sorokatyi 
Yuriy Fedkovych Chernivtsi National University  Ukraine
Mykola O. Sorokatyi 
Yuriy Fedkovych Chernivtsi National University  Ukraine
Olga P. Andreeva 
PJC ”CDB Rhythm”, Chernivtsy  Ukraine