ELIPSOMETRYCZNY SYSTEM SPEKTROSKOPOWY DO SZYBKIEJ OCENY SKŁADU CIENKICH WARSTW Bi2Te3-XSeX

Vladimir Kovalev; Saygid Uvaysov; Marcin Bogucki

doi:10.35784/iapgos.2855

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Published: 2021-12-20

DOI: https://doi.org/10.35784/iapgos.2855

Issue Vol. 11 No. 4 (2021)

SINGULAR INTEGRATION IN BOUNDARY ELEMENT METHOD FOR HELMHOLTZ EQUATION FORMULATED IN FREQUENCY DOMAIN
Tomasz Rymarczyk, Jan Sikora

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Bohdan Nikolaienko, Serhii Vasylenko

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INDIRECT INFORMATION HIDING TECHNOLOGY ON A MULTIADIC BASIS
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SELECTED APPLICATIONS OF DEEP NEURAL NETWORKS IN SKIN LESION DIAGNOSTIC
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FACTOR ANALYSIS METHOD APPLICATION FOR CONSTRUCTING OBJECTIVE FUNCTIONS OF OPTIMIZATION IN MULTIMODAL TRANSPORT PROBLEMS
Serhii Zabolotnii, Artem Honcharov, Sergii Mogilei

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QUALITY OF SATELLITE COMMUNICATION IN SELECTED MOBILE ANDROID SMARTPHONES
Przemysław Falkowski-Gilski

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CHROMATIC DISPERSION COMPENSATION IN EXISTING FIBER OPTIC TELECOMMUNICATION LINES WITH THE GROWING BIT RATES NEEDS OF DWDM SYSTEM
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FIBRE OPTIC BRAGG STRUCTURES WITH MONOTONIC APODISATION CHARACTERISTICS
Jacek Klimek

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ON THE CAPACITY OF SOLAR CELLS UNDER PARTIAL SHADING CONDITIONS
Mateusz Bartczak

47-50
CONTROLLING A FOUR-WIRE THREE-LEVEL AC/DC CONVERTER WITH INDEPENDENT POWER CONTROL IN EVERY PHASE
Bartłomiej Stefańczak

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METHOD OF MEASUREMENT AND REDUCTION OF THE ELECTROMAGNETIC DISTURBANCES INDUCTED BY SWITCHING SURGES IN LV CIRCUITS
Patryk Wąsik

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INCREASING THE COST-EFFECTIVENESS OF IN VITRO RESEARCH THROUGH THE USE OF TITANIUM IN THE DEVICE FOR MEASURING THE ELECTRICAL PARAMETERS OF CELLS
Dawid Zarzeczny

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ELLIPSOMETRY BASED SPECTROSCOPIC COMPLEX FOR RAPID ASSESSMENT OF THE Bi2Te3-xSex THIN FILMS COMPOSITION
Vladimir Kovalev, Saygid Uvaysov, Marcin Bogucki

67-74
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Authors

Vladimir Kovalev

vladimirkovalev.inc@gmail.com

MOCVD Semiconductor Growth Laboratory, Kotelnikov Institute of Radio-Engineering and Electronics of RAS

http://orcid.org/0000-0003-3570-393X (unauthenticated)

Saygid Uvaysov

uvaysov@yandex.ru

MIREA – Russian Technological University

http://orcid.org/0000-0003-1943-6819 (unauthenticated)

Marcin Bogucki

m.bogucki@pollub.pl

Lublin University of Technology, Faculty of Mechanical Engineering, Department of Automation

http://orcid.org/0000-0001-5296-3827 (unauthenticated)

Abstract

A comparative analysis of the current state and development of spectral ellipsometry (SE) is carried out, the main limitations typical of popular configurations of measuring devices are determined. An original technical solution is proposed that allows one to create a two-source SE that implements the ellipsometry method with switching orthogonal polarization states. The measuring setup provides high precision of measurements of ellipsometric parameters Ψ and Δ in the spectral range of 270–2200 nm and the speed determined by the characteristics of pulsed sources with a simple ellipsometer design. As objects for experimental researches, confirming the efficiency and high precision qualities of the fabricated SE, we used a GaAs/ZnS-quarter-wave device for a CO2 laser and SiO₂ on Si calibration plates. The optical properties of Bi₂Te_3-xSe_x films were investigated in the range of 270–1000 nm using a multi-angle SE. It was shown that the optical properties of Bi₂Te_3-xSe_x films monotonically change depending on the ratio of selenium and tellurium.

Keywords:

thin films, optical properties, spectroscopy, Fourier transform, ellipsometry and polarimetry, optics on surfaces, instrumentation, measurements and metrology

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ELLIPSOMETRY BASED SPECTROSCOPIC COMPLEX FOR RAPID ASSESSMENT OF THE Bi2Te3-xSex THIN FILMS COMPOSITION. (2021). Informatyka, Automatyka, Pomiary W Gospodarce I Ochronie Środowiska, 11(4), 67-74. https://doi.org/10.35784/iapgos.2855

ELLIPSOMETRY BASED SPECTROSCOPIC COMPLEX FOR RAPID ASSESSMENT OF THE Bi2Te3-xSex THIN FILMS COMPOSITION

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