ANALYSIS OF AN ANTI-PARALLEL MEMRISTOR CIRCUIT
Valeri Mladenov
valerim@tu-sofia.bgTechnical University of Sofia, Faculty of Automatics, Department of Theoretical Electrical Engineering (Bulgaria)
Stoyan Kirilov
Technical University of Sofia, Faculty of Automatics, Department of Theoretical Electrical Engineering (Bulgaria)
Abstract
The basic purpose of the present paper is to propose an extended investigation and computer analysis of an anti-parallel memristor circuit with two equivalent memristor elements with different initial values of the state variables using a modified Boundary Condition Memristor (BCM) Model and the finite differences method. The memristor circuit is investigated for sinusoidal supply current at different magnitudes – for soft-switching and hard-switching modes, respectively. The influence of the initial values of the state variables on the circuit’s behaviour is presented as well. The equivalent i-v and memristance-flux and the other important relationshipsof the memristor circuit are also analyzed.
Keywords:
memristor, anti-parallel memristor circuit, finite-differences method, equivalent resistanceReferences
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Authors
Valeri Mladenovvalerim@tu-sofia.bg
Technical University of Sofia, Faculty of Automatics, Department of Theoretical Electrical Engineering Bulgaria
Authors
Stoyan KirilovTechnical University of Sofia, Faculty of Automatics, Department of Theoretical Electrical Engineering Bulgaria
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