ANALYSIS OF AN ANTI-PARALLEL MEMRISTOR CIRCUIT

Valeri Mladenov

valerim@tu-sofia.bg
Technical University of Sofia, Faculty of Automatics, Department of Theoretical Electrical Engineering (Bulgaria)

Stoyan Kirilov


Technical University of Sofia, Faculty of Automatics, Department of Theoretical Electrical Engineering (Bulgaria)

Abstract

The basic purpose of the present paper is to propose an extended investigation and computer analysis of an anti-parallel memristor circuit with two equivalent memristor elements with different initial values of the state variables using a modified Boundary Condition Memristor (BCM) Model and the finite differences method. The memristor circuit is investigated for sinusoidal supply current at different magnitudes – for soft-switching and hard-switching modes, respectively. The influence of the initial values of the state variables on the circuit’s behaviour is presented as well. The equivalent i-v and memristance-flux and the other important relationshipsof the memristor circuit are also analyzed.


Keywords:

memristor, anti-parallel memristor circuit, finite-differences method, equivalent resistance

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Published
2018-05-30

Cited by

Mladenov, V., & Kirilov, S. (2018). ANALYSIS OF AN ANTI-PARALLEL MEMRISTOR CIRCUIT. Informatyka, Automatyka, Pomiary W Gospodarce I Ochronie Środowiska, 8(2), 9–14. https://doi.org/10.5604/01.3001.0012.0696

Authors

Valeri Mladenov 
valerim@tu-sofia.bg
Technical University of Sofia, Faculty of Automatics, Department of Theoretical Electrical Engineering Bulgaria

Authors

Stoyan Kirilov 

Technical University of Sofia, Faculty of Automatics, Department of Theoretical Electrical Engineering Bulgaria

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