ANALYSIS AND VERIFICATION OF INTEGRATED CIRCUIT THERMAL PARAMETERS
Maciej Frankiewicz
frankiew@agh.edu.plAGH University of Science and Technology, Department of Electronics (Poland)
Adam Gołda
AGH University of Science and Technology, Department of Electronics (Poland)
Andrzej Kos
AGH University of Science and Technology, Department of Electronics (Poland)
Abstract
The paper describes thermal model of an ASIC designed and fabricated in CMOS 0.7 mm (5 V) technology. The integrated circuit consists of analogue and digital heat sources and some temperature sensors. It has been designed to carry out some thermal tests. During tests thermal resistances, capacities, time constants and convection coefficients for different packages, positions and cooling methods were extracted. The parameters of thermal model were used in simulation to compare results with real-world measurements.
Keywords:
thermal resistance, thermal capacity, thermal time constant, CMOSReferences
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Authors
Maciej Frankiewiczfrankiew@agh.edu.pl
AGH University of Science and Technology, Department of Electronics Poland
Authors
Adam GołdaAGH University of Science and Technology, Department of Electronics Poland
Authors
Andrzej KosAGH University of Science and Technology, Department of Electronics Poland
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