FRACTAL GEOMETRIES IN LATERAL FLUX CAPACITOR DESIGN – EXPERIMENTAL RESULTS
Piotr Kocanda
pkocanda@agh.edu.plAGH University of Science and Technology (Poland)
Andrzej Kos
AGH University of Science and Technology (Poland)
Adam Gołda
AGH University of Science and Technology (Poland)
Abstract
Capacitance density is increased when lateral flux structures are used in CMOS technologies compared to classic parallel-palate capacitors. Lateral-flux capacitors where designed based on three different fractal geometries. Capacitors are designed with and without special MMC metal layer available in some CMOS technologies for capacitor design. For theoretical analysis verification a special ASIC has been designed and fabricated in UMC 0.18um technology. Presented result are obtained by measurement of 5 ICs. Some capacitor structures have much higher capacitance density than classic parallel-plates capacitor without MMC layer. Few presented structures have higher capacitance density than parallel-plate capacitor made with MMC layer. Capacitors have small process parameters spread.
Keywords:
Capacitors, CMOS integrated circuit, fractalsReferences
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Authors
Andrzej KosAGH University of Science and Technology Poland
Authors
Adam GołdaAGH University of Science and Technology Poland
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