FRACTAL GEOMETRIES IN LATERAL FLUX CAPACITOR DESIGN – EXPERIMENTAL RESULTS

Piotr Kocanda

pkocanda@agh.edu.pl
AGH University of Science and Technology (Poland)

Andrzej Kos


AGH University of Science and Technology (Poland)

Adam Gołda


AGH University of Science and Technology (Poland)

Abstract

Capacitance density is increased when lateral flux structures are used in CMOS technologies compared to classic parallel-palate capacitors. Lateral-flux capacitors where designed based on three different fractal geometries. Capacitors are designed with and without special MMC metal layer available in some CMOS technologies for capacitor design. For theoretical analysis verification a special ASIC has been designed and fabricated in UMC 0.18um technology. Presented result are obtained by measurement of 5 ICs. Some capacitor structures have much higher capacitance density than classic parallel-plates capacitor without  MMC layer. Few presented structures have higher capacitance density than parallel-plate capacitor made with MMC layer. Capacitors have small process parameters spread.


Keywords:

Capacitors, CMOS integrated circuit, fractals

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Published
2015-06-30

Cited by

Kocanda, P., Kos, A., & Gołda, A. (2015). FRACTAL GEOMETRIES IN LATERAL FLUX CAPACITOR DESIGN – EXPERIMENTAL RESULTS. Informatyka, Automatyka, Pomiary W Gospodarce I Ochronie Środowiska, 5(2), 6–9. https://doi.org/10.5604/20830157.1159318

Authors

Piotr Kocanda 
pkocanda@agh.edu.pl
AGH University of Science and Technology Poland

Authors

Andrzej Kos 

AGH University of Science and Technology Poland

Authors

Adam Gołda 

AGH University of Science and Technology Poland

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