The schematic diagrams of the temperature measuring device based on transistor structures are presented in the paper. The temperature dependence of collector current without and with linearization of the conversion function is analysed. The linearization method based on compensation current formation is proposed. This allowed to reduce the temperature measurement error up to ± 0.006°C over the temperature ranges 40… 60°C and 60… 80°C and up to 0.08°C over the temperature range 10… 90°C.


temperaturę measurement; transistor structures; linearization

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Published : 2020-06-30

Hotra, O. (2020). TRANSISTOR-BASED TEMPERATURE MEASURING DEVICE. Informatyka, Automatyka, Pomiary W Gospodarce I Ochronie Środowiska, 10(2), 4-7.

Oleksandra Hotra
Lublin University of Technology  Poland