Development of deposition technology and AC measurement of copper ultrathin layers


In this paper, the transport properties of discontinuous 4 nm copper layers obtained by dual-source non-reactive magnetron sputtering in the presence of argon are presented. The value of resistance and capacitance of the current parallel to the plane of these layers can be adjusted independently by changing the nominal thickness of the metallization. The influence of frequency on the conductivity of the obtained structures in the range from 4 Hz to 8 MHz was studied. Additionally, in order to compare the non-oxidized and oxidized layers, some of them were heated at 500 °C. Based on the results obtained, the mechanism of electric charge transfer was determined, the knowledge of which is essential for planning further experiments based on this sputtering method and potential selection of future application of the structures. Statistical measurements at room temperature will serve as a reference for the conductivity and resistivity values obtained by mathematical calculations from measurements of resistance, capacitance, phase shift angle, and dielectric loss tangent as a function of temperature from 20 K to 375 K, which are expected in further studies on the obtained structures. The work is an introduction to the technology of obtaining multi-layer metal-dielectric structures.


magnetron sputtering; ultrathin layers; AC measurement; conductivity measurement; charge transport; Cu films

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Published : 2022-03-31

Wilczyńska, A., Czarnacka, K., Kociubiński, A., & Kołtunowicz, T. (2022). Development of deposition technology and AC measurement of copper ultrathin layers. Informatyka, Automatyka, Pomiary W Gospodarce I Ochronie Środowiska, 12(1), 36-39.

Aleksandra Wilczyńska
Lublin University of Technology, Department of Electrical Devices and High Voltage Technology  Poland
Karolina Czarnacka 
University of Life Sciences in Lublin, Department of Technology Fundamentals  Poland
Andrzej Kociubiński 
Lublin University of Technology, Department of Electronic and Information Technology  Poland
Tomasz Kołtunowicz 
Lublin University of Technology, Department of Electrical Devices and High Voltage Technology  Poland