THE DESIGN OF READOUT FRONT-END ELECTRONICS FOR TIME AND ENERGY MEASUREMENTS FOR SEMICONDUCTOR STRIP DETECTORS
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Published:
Dec 27, 2013
Issue Vol. 3 No. 4 (2013)
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Abstract
This work presents the design of the readout front-end electronics for time and energy measurements dedicated for double-sided strip detectors implemented in submicron technology UMC 180 nm CMOS. The simultaneous and accurate measurements of time and energy deposited in the detector by a photon requires the use of two different parallel processing paths in the single channel: fast and slow. The designed front-end electronics is characterized by low power dissipation level P=3.2 mW, low noise performance ENC=586 e- rms (for “slow” path and at Cdet=30 pF). The single channel occupies silicon chip area of 50 µm × 1100 µm.
Keywords:
X-ray detection application, low noise electronics, CMOS readout front-end electronics, time and energy measurements
Article Details
Kłeczek, R. . (2013). THE DESIGN OF READOUT FRONT-END ELECTRONICS FOR TIME AND ENERGY MEASUREMENTS FOR SEMICONDUCTOR STRIP DETECTORS. Informatyka, Automatyka, Pomiary W Gospodarce I Ochronie Środowiska, 3(4), 18–21. https://doi.org/10.35784/iapgos.1472
