Development and research of W-parameters of potentially unstable four-poles based on the mathematical model of W-parameters of field-effect transistors in the high-frequency range

The models underlying calculations and research provide the developers with information about the behavior of devices during operation. As modern technologies do not provide high accuracy of measurements, the unstructured models are used, in particular, four-poles, which describe electrical circuits through their external characteristics, without taking into account the internal structure. Four-pole parameters, such as conductivities and impedances, can be measured using special methods, which allows effective analysis of the electrical properties of devices and systems.

Keywords:

structureless models, field-effect transistors, four-poles, W-parameters

References

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Voznyak, O., Kovalova, K., Polievoda, Y., Kolianovska, L., Ovsienko, S., & Solomon, A. (2025). Development and research of W-parameters of potentially unstable four-poles based on the mathematical model of W-parameters of field-effect transistors in the high-frequency range. Informatyka, Automatyka, Pomiary W Gospodarce I Ochronie Środowiska, 15(3), 87–90. https://doi.org/10.35784/iapgos.7071

Development and research of W-parameters of potentially unstable four-poles based on the mathematical model of W-parameters of field-effect transistors in the high-frequency range

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